Systematic investigation of surface modification by organosiloxane self-assembled on indium-tin oxide for improved hole injection in organic light-emitting diodes.
Identifieur interne : 000032 ( Main/Exploration ); précédent : 000031; suivant : 000033Systematic investigation of surface modification by organosiloxane self-assembled on indium-tin oxide for improved hole injection in organic light-emitting diodes.
Auteurs : RBID : pubmed:24593887Abstract
Various works on modification of the indium-tin oxide (ITO) substrate have been carried out so as to enhance hole injection in organic light-emitting devices. Herein, a simple and efficient approach to tuning the work function of the ITO substrate is described by surface modification of ITO with an organosiloxane self-assembled monolayer. The influences of the electronegativity on modification of the ITO substrate are systematically investigated by attaching electron-withdrawing groups (Cl, Br, and I) and an electron-donating group (NH2) to the organosiloxane materials. The preparation and modification of the ITO substrate has been studied using primarily atomic force microscopy and X-ray photoelectron spectroscopy and vacuum-ultraviolet spectroscopy, and remarkable changes have been observed after modification. The device based on a 3Cl-Si-ITO-modified anode exhibits the best efficiency among the devices, better than the control devices based on bare ITO, UV-treated ITO, and even Cl-ITO.
DOI: 10.1021/am500399e
PubMed: 24593887
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Systematic investigation of surface modification by organosiloxane self-assembled on indium-tin oxide for improved hole injection in organic light-emitting diodes.</title><author><name sortKey="Zhao, Yan" uniqKey="Zhao Y">Yan Zhao</name><affiliation wicri:level="1"><nlm:affiliation>Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University , Beijing 100084, China.</nlm:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University , Beijing 100084</wicri:regionArea></affiliation></author><author><name sortKey="Duan, Lian" uniqKey="Duan L">Lian Duan</name></author><author><name sortKey="Zhang, Deqiang" uniqKey="Zhang D">Deqiang Zhang</name></author><author><name sortKey="Dong, Guifang" uniqKey="Dong G">Guifang Dong</name></author><author><name sortKey="Qiao, Juan" uniqKey="Qiao J">Juan Qiao</name></author><author><name sortKey="Wang, Liduo" uniqKey="Wang L">Liduo Wang</name></author><author><name sortKey="Qiu, Yong" uniqKey="Qiu Y">Yong Qiu</name></author></titleStmt><publicationStmt><date when="2014">2014</date><idno type="doi">10.1021/am500399e</idno><idno type="RBID">pubmed:24593887</idno><idno type="pmid">24593887</idno><idno type="wicri:Area/Main/Corpus">000137</idno><idno type="wicri:Area/Main/Curation">000137</idno><idno type="wicri:Area/Main/Exploration">000032</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Various works on modification of the indium-tin oxide (ITO) substrate have been carried out so as to enhance hole injection in organic light-emitting devices. Herein, a simple and efficient approach to tuning the work function of the ITO substrate is described by surface modification of ITO with an organosiloxane self-assembled monolayer. The influences of the electronegativity on modification of the ITO substrate are systematically investigated by attaching electron-withdrawing groups (Cl, Br, and I) and an electron-donating group (NH2) to the organosiloxane materials. The preparation and modification of the ITO substrate has been studied using primarily atomic force microscopy and X-ray photoelectron spectroscopy and vacuum-ultraviolet spectroscopy, and remarkable changes have been observed after modification. The device based on a 3Cl-Si-ITO-modified anode exhibits the best efficiency among the devices, better than the control devices based on bare ITO, UV-treated ITO, and even Cl-ITO.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Process"><PMID Version="1">24593887</PMID><DateCreated><Year>2014</Year><Month>03</Month><Day>26</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1944-8252</ISSN><JournalIssue CitedMedium="Internet"><Volume>6</Volume><Issue>6</Issue><PubDate><Year>2014</Year><Month>Mar</Month><Day>26</Day></PubDate></JournalIssue><Title>ACS applied materials & interfaces</Title><ISOAbbreviation>ACS Appl Mater Interfaces</ISOAbbreviation></Journal><ArticleTitle>Systematic investigation of surface modification by organosiloxane self-assembled on indium-tin oxide for improved hole injection in organic light-emitting diodes.</ArticleTitle><Pagination><MedlinePgn>4570-7</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/am500399e</ELocationID><Abstract><AbstractText>Various works on modification of the indium-tin oxide (ITO) substrate have been carried out so as to enhance hole injection in organic light-emitting devices. Herein, a simple and efficient approach to tuning the work function of the ITO substrate is described by surface modification of ITO with an organosiloxane self-assembled monolayer. The influences of the electronegativity on modification of the ITO substrate are systematically investigated by attaching electron-withdrawing groups (Cl, Br, and I) and an electron-donating group (NH2) to the organosiloxane materials. The preparation and modification of the ITO substrate has been studied using primarily atomic force microscopy and X-ray photoelectron spectroscopy and vacuum-ultraviolet spectroscopy, and remarkable changes have been observed after modification. The device based on a 3Cl-Si-ITO-modified anode exhibits the best efficiency among the devices, better than the control devices based on bare ITO, UV-treated ITO, and even Cl-ITO.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Zhao</LastName><ForeName>Yan</ForeName><Initials>Y</Initials><Affiliation>Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University , Beijing 100084, China.</Affiliation></Author><Author ValidYN="Y"><LastName>Duan</LastName><ForeName>Lian</ForeName><Initials>L</Initials></Author><Author ValidYN="Y"><LastName>Zhang</LastName><ForeName>Deqiang</ForeName><Initials>D</Initials></Author><Author ValidYN="Y"><LastName>Dong</LastName><ForeName>Guifang</ForeName><Initials>G</Initials></Author><Author ValidYN="Y"><LastName>Qiao</LastName><ForeName>Juan</ForeName><Initials>J</Initials></Author><Author ValidYN="Y"><LastName>Wang</LastName><ForeName>Liduo</ForeName><Initials>L</Initials></Author><Author ValidYN="Y"><LastName>Qiu</LastName><ForeName>Yong</ForeName><Initials>Y</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2014</Year><Month>03</Month><Day>14</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>ACS Appl Mater Interfaces</MedlineTA><NlmUniqueID>101504991</NlmUniqueID><ISSNLinking>1944-8244</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2014</Year><Month>3</Month><Day>14</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>3</Month><Day>6</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>3</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>3</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/am500399e</ArticleId><ArticleId IdType="pubmed">24593887</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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